The intermixing and strain effects on electroluminescence of SiGe dots | Zendy

M.-H. Liao | Zendy; C.-H. Lee | Zendy; T. A. Hung | Zendy; C. W. Liu | Zendy

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The intermixing and strain effects on electroluminescence of SiGe dots

Author(s) -

M.-H. Liao,

C.-H. Lee,

T. A. Hung,

C. W. Liu

Publication year - 2007

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.2777686

Subject(s) - electroluminescence , materials science , raman spectroscopy , quantum dot , spectroscopy , layer (electronics) , optoelectronics , secondary ion mass spectrometry , chemical vapor deposition , analytical chemistry (journal) , ion , nanotechnology , chemistry , optics , physics , organic chemistry , quantum mechanics , chromatography

Secondary-ion mass spectroscopy, energy dispersion spectrometry, and Raman spectroscopy reveal that SiGe dots grown by ultrahigh-vacuum chemical vapor deposition at 600°C exhibit significant intermixing with an average Ge composition of ∼50%. Raman spectroscopy shows the top SiGe quantum dots of the 20-layer sample to be more relaxed than those of the 5-layer samples. As a result, the electroluminescence from the top SiGe quantum dots of the 20-layer sample has the higher peak energy at ∼0.84eV as compared to ∼0.82eV for the 5-layer sample. The external tensile mechanical strain can compensate the built-in compressive strain of SiGe quantum dots and increase electroluminescence energy.

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