Pt nanocrystals formed by ion implantation: A defect-mediated nucleation process | Zendy

R. Giulian | Zendy; P. Kluth | Zendy; L. L. Araujo | Zendy; David Llewellyn | Zendy; M. C. Ridgway | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Pt nanocrystals formed by ion implantation: A defect-mediated nucleation process

Author(s) -

R. Giulian,

P. Kluth,

L. L. Araujo,

David Llewellyn,

M. C. Ridgway

Publication year - 2007

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2777165

Subject(s) - nucleation , nanocrystal , irradiation , fluence , materials science , ion , ion implantation , layer (electronics) , germanium , crystallography , range (aeronautics) , metal , nanotechnology , chemistry , optoelectronics , metallurgy , silicon , composite material , organic chemistry , physics , nuclear physics

The influence of ion irradiation of SiO2 on the size of metal nanocrystals (NCs) formed by ion implantation has been investigated. Thin SiO2 films were irradiated with high-energy Ge ions then implanted with Pt ions. Without Ge irradiation, the largest Pt NCs were observed beyond the Pt projected range. With irradiation, Ge-induced structural modification of the SiO2 layer yielded a decrease in Pt NC size with increasing Ge fluence at such depths. A defect-mediated NC nucleation mechanism is proposed and a simple yet effective means of modifying and controlling the Pt NC size is demonstrated.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research