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Transmission increase upon switching of VO2 thin films on microstructured surfaces
Author(s) -
I. Karakurt,
Johannes Boneberg,
P. Leiderer,
René López,
A. Halabica,
Richard F. Haglund
Publication year - 2007
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.2776368
Subject(s) - materials science , thin film , transmission (telecommunications) , microstructure , semiconductor , phase transition , optics , scattering , phase (matter) , optoelectronics , composite material , nanotechnology , condensed matter physics , chemistry , physics , organic chemistry , electrical engineering , engineering
The authors compare transmission measurements of near-infrared light through VO2 thin films on smooth substrates and on ordered arrays of silica microspheres. When the samples are heated above the critical temperature for the semiconductor-metallic phase transition, smooth thin films show reduced transmission independent of thickness; however, the VO2 film deposited on the microspheres may show either reduced or enhanced transmission, depending on VO2 film thickness. They show that this at a first glance, unexpected behavior is directly related to the change of scattering efficiency upon the phase transition. This suggests that optical transmission through thin-film microstructures could be tuned by an appropriate combination of microsphere ordering and VO2 film thickness.Publisher's Versio

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