Correlating electrical resistance to growth conditions for multiwalled carbon nanotubes | Zendy

Chun Lan | Zendy; Placidus B. Amama | Zendy; Timothy S. Fisher | Zendy; R. Reifenberger | Zendy

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Correlating electrical resistance to growth conditions for multiwalled carbon nanotubes

Author(s) -

Chun Lan,

Placidus B. Amama,

Timothy S. Fisher,

R. Reifenberger

Publication year - 2007

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2776022

Subject(s) - plasma enhanced chemical vapor deposition , materials science , raman spectroscopy , carbon nanotube , chemical vapor deposition , electrical resistance and conductance , sheet resistance , electrical resistivity and conductivity , composite material , chemical engineering , nanotechnology , layer (electronics) , electrical engineering , engineering , optics , physics

A correlation between growth temperature and electrical resistance of multiwalled carbon nanotubes (MWNTs) has been established by measuring the resistance of individual MWNTs grown by microwave plasma-enhanced chemical vapor deposition (PECVD) at 800, 900, and 950°C. The lowest resistances were obtained mainly from MWNTs grown at 900°C. The MWNT resistance is larger on average at lower (800°C) and higher (950°C) growth temperatures. The resistance of MWNTs correlated well with other MWNT quality indices obtained from Raman spectra. This study identifies a temperature window for growing higher-quality MWNTs with fewer defects and lower resistance by PECVD.

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