Initial stages of chain formation in a single layer of (In,Ga)As quantum dots grown on GaAs (100) | Zendy

M. Schmidbauer | Zendy; Zh. M. Wang | Zendy; Yu. I. Mazur | Zendy; P. M. Lytvyn | Zendy; G. J. Salamo | Zendy; D. Grigoriev | Zendy; P. Schäfer | Zendy; Ralf Köhler | Zendy; M. Hanke | Zendy

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Initial stages of chain formation in a single layer of (In,Ga)As quantum dots grown on GaAs (100)

Author(s) -

M. Schmidbauer,

Zh. M. Wang,

Yu. I. Mazur,

P. M. Lytvyn,

G. J. Salamo,

D. Grigoriev,

P. Schäfer,

Ralf Köhler,

M. Hanke

Publication year - 2007

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2775801

Subject(s) - quantum dot , molecular beam epitaxy , condensed matter physics , anisotropy , gallium arsenide , scattering , materials science , relaxation (psychology) , layer (electronics) , strain (injury) , epitaxy , molecular physics , physics , optoelectronics , nanotechnology , optics , medicine , psychology , social psychology

The self-organized formation of In0.40Ga0.60As quantum dot chains was investigated using x-ray scattering. Two samples were compared grown on GaAs(100) by molecular beam epitaxy. The first sample with a single layer of In0.40Ga0.60As dots shows weak quantum dot alignment and a corresponding elongated shape along [01¯1], while the top layer of a multilayered In0.40Ga0.60As∕GaAs sample exhibits extended and highly regular quantum dot chains oriented along [01¯1]. Numerical calculations of the three-dimensional strain fields are used to explain the initial stages of chain formation by anisotropic strain relaxation induced by the elongated dot shape.

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