Effect of GaP strain compensation layers on rapid thermally annealed InGaAs∕GaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition | Zendy

Lan Fu | Zendy; Ian McKerracher | Zendy; Hark Hoe Tan | Zendy; C. Jagadish | Zendy; Nenad Vukmirović | Zendy; P. Harrison | Zendy

Open Access

Effect of GaP strain compensation layers on rapid thermally annealed InGaAs∕GaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition

Author(s) -

Lan Fu,

Ian McKerracher,

Hark Hoe Tan,

C. Jagadish,

Nenad Vukmirović,

P. Harrison

Publication year - 2007

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2770765

Subject(s) - materials science , chemical vapor deposition , photodetector , optoelectronics , annealing (glass) , infrared , laser linewidth , gallium arsenide , quantum dot , band gap , optics , composite material , physics , laser

The effect of GaP strain compensation layers was investigated on ten-layer InGaAs∕GaAs quantum dot infrared photodetectors (QDIPs) grown by metal-organic chemical-vapor deposition. Compared with the normal QDIP structure, the insertion of GaP has led to a narrowed spectral linewidth and slightly improved detector performance. A more significant influence of GaP was observed after the structure was annealed at various temperatures. While a similar amount of wavelength tuning was obtained, the GaP QDIPs exhibited much less degradation in device characteristics with increasing annealing temperature.

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