Open AccessEffect of growth temperature on defect states of GaAsSbN intrinsic layer in GaAs∕GaAsSbN∕GaAs photodiode for 1.3μm application
Author(s) -
Satrio Wicaksono,
Soon Fatt Yoon,
Wan Khai Loke,
K. H. Tan,
K. L. Lew,
Malek Zegaoui,
JeanPierre Vilcot,
D. Decoster,
J. Chazelas
Publication year - 2007
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.2769801
Subject(s) - deep level transient spectroscopy , gallium arsenide , photodiode , chemistry , crystallographic defect , layer (electronics) , analytical chemistry (journal) , optoelectronics , materials science , condensed matter physics , silicon , crystallography , physics , organic chemistry , chromatography
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