Phonon-assisted stimulated emission from pendeoepitaxy GaN stripes grown on 6H-SiC substrates | Zendy

Y. C. Chang | Zendy; YiMei Li | Zendy; Darren B. Thomson | Zendy; R. F. Davis | Zendy

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Phonon-assisted stimulated emission from pendeoepitaxy GaN stripes grown on 6H-SiC substrates

Author(s) -

Y. C. Chang,

YiMei Li,

Darren B. Thomson,

R. F. Davis

Publication year - 2007

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2767239

Subject(s) - materials science , wide bandgap semiconductor , lasing threshold , phonon , refractive index , optoelectronics , band gap , absorption (acoustics) , ellipsometry , stimulated emission , optics , condensed matter physics , thin film , laser , wavelength , nanotechnology , physics , composite material

Phonon-assisted stimulated emission has been demonstrated by photopumping GaN stripes grown via pendeoepitaxy on 6H-SiC (0001) substrates. Transverse-electric-polarized emission with well-defined Fabry-Perot modes located at one longitudinal optical phonon energy (90meV) below the band gap of GaN was observed at 77K. An effective refractive index of 8.578 was obtained using a cavity length of 13.3μm and a mode spacing of 0.6nm. This value is significantly higher than the value previously reported in the literature using ellipsometry, which indicates that the absorption loss is more severe during lasing when the excess carrier concentration is very high.

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