Dissolution of metal precipitates in multicrystalline silicon during annealing and the protective effect of phosphorus emitters | Zendy

J. Tan | Zendy; Daniel Macdonald | Zendy; Neil Bennett | Zendy; Dal Sung Kong | Zendy; A. Cuevas | Zendy; I.G. Romijn | Zendy

Open Access

Dissolution of metal precipitates in multicrystalline silicon during annealing and the protective effect of phosphorus emitters

Author(s) -

J. Tan,

Daniel Macdonald,

Neil Bennett,

Dal Sung Kong,

A. Cuevas,

I.G. Romijn

Publication year - 2007

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2766664

Subject(s) - dissolution , annealing (glass) , silicon , materials science , metallurgy , carrier lifetime , metal , precipitation , chemical engineering , engineering , physics , meteorology

The degradation of the carrier lifetime in multicrystalline silicon due to the dissolution of metal precipitates during high temperature annealing is well known. This letter presents evidence indicating that the presence of phosphorus emitters during annealing can help reduce this recontamination. Part of the degradation observed is due to increased interstitial iron concentrations caused by the dissolution of iron precipitates during annealing. However, dissolution of other metals also seems to contribute to the reduced carrier lifetimes observed. © 2007 American Institute of Physics. DOI: 10.1063/1.2766664

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