Sequential thermal treatments of SiC in NO and O2: Atomic transport and electrical characteristics | Zendy

G. V. Soares | Zendy; I. J. R. Baumvol | Zendy; Leonie Hold | Zendy; F. Kong | Zendy; Ji Sheng Han | Zendy; Sima Dimitrijev | Zendy; C. Radtke | Zendy; F. C. Stedile | Zendy

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Sequential thermal treatments of SiC in NO and O2: Atomic transport and electrical characteristics

Author(s) -

G. V. Soares,

I. J. R. Baumvol,

Leonie Hold,

F. Kong,

Ji Sheng Han,

Sima Dimitrijev,

C. Radtke,

F. C. Stedile

Publication year - 2007

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2763966

Subject(s) - x ray photoelectron spectroscopy , annealing (glass) , materials science , dielectric , analytical chemistry (journal) , silicon carbide , thermal , silicon , capacitance , optoelectronics , chemistry , chemical engineering , electrode , composite material , thermodynamics , physics , chromatography , engineering

Sequential thermal oxidations and oxynitridations of SiC were performed using 18O2 and NO. The resulting films were characterized by x-ray photoelectron spectroscopy, ion beam analyses, and capacitance-voltage measurements. The best electrical characteristics were obtained from films directly grown in NO. A subsequent oxidation in O2 degraded the interface due to negative flatband-voltage shift, removal of N, and formation of C compounds, while a further annealing in NO brought the flatband shift in the C-V curves to rather moderate figures. This shift is related to competitive processes taking place during dielectric film formation which are discussed.No Full Tex

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