Open AccessComment on “Ultrathin low-temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition” [Appl. Phys. Lett. 90, 092108 (2007)]
Author(s) -
Yu. B. Bolkhovityanov
Publication year - 2007
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.2760136
Subject(s) - chemical vapor deposition , materials science , buffer (optical fiber) , optoelectronics , vacuum deposition , germanium , germanium compounds , deposition (geology) , thin film , silicon , nanotechnology , paleontology , sediment , biology , telecommunications , computer science
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