Comment on “Ultrathin low-temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition” [Appl. Phys. Lett. 90, 092108 (2007)] | Zendy

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Comment on “Ultrathin low-temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition” [Appl. Phys. Lett. 90, 092108 (2007)]

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