Elucidation of homojunction formation in CuInS2 with impedance spectroscopy | Zendy

Ruben Loef | Zendy; J. Schoonman | Zendy; Albert Goossens | Zendy

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Elucidation of homojunction formation in CuInS2 with impedance spectroscopy

Author(s) -

Ruben Loef,

J. Schoonman,

Albert Goossens

Publication year - 2007

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.2759470

Subject(s) - homojunction , dielectric spectroscopy , materials science , acceptor , spectroscopy , capacitance , charge carrier density , analytical chemistry (journal) , optoelectronics , chemistry , electrode , condensed matter physics , heterojunction , physics , quantum mechanics , doping , chromatography , electrochemistry

Type transformation in CuInSe2 and CuInS2 solar cells is an important issue with far reaching consequences. In the present study, the presence of a p-n homojunction inside CuInS2 in a TiO2/CuInS2 device is revealed with a detailed impedance spectroscopy and capacitance study. A n-type CuInS2 film with a thickness of 40?nm is found at the TiO2 (n-type)/CuInS2 (p-type) interface. The effective donor density of this n-type film is 2×1017?cm?3 at 400?K and is higher than the effective acceptor density in the remaining p-type CuInS2, being 4×1016?cm?3 at 400?K. Both densities decrease upon increasing the temperature. This is explained by the activation of a CuIn? acceptor state in n-type CuInS2 and a thermally activated hole trap in p-type CuInS2.DelftChemTechApplied Science

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