Open Access+Capacitance-voltage characteristics of BiFeO3∕SrTiO3∕GaN heteroepitaxial structures
Author(s) -
SoYoung Yang,
Qian Zhan,
Peng Yang,
M. P. Cruz,
YingHao Chu,
R. Ramesh,
YuhRenn Wu,
J. Singh,
Wei Tian,
Darrell G. Schlom
Publication year - 2007
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.2757089
Subject(s) - materials science , epitaxy , capacitor , chemical vapor deposition , optoelectronics , hysteresis , capacitance , wide bandgap semiconductor , metalorganic vapour phase epitaxy , ferroelectricity , thin film , semiconductor , multiferroics , voltage , nanotechnology , dielectric , condensed matter physics , layer (electronics) , electrode , electrical engineering , chemistry , physics , engineering
The authors report the integration of multiferroic BiFeO3 films with the semiconductor GaN using liquid-delivery metal-organic chemical-vapor deposition. Epitaxial BiFeO3 films were deposited via interface control using SrTiO3 buffer/template layers. The growth orientation relationship was found to be (111)[11¯0]BiFeO3‖(111)[11¯0]SrTiO3‖(0001)[112¯0]GaN, with in-plane 180° rotational twins. The C-V characteristics of a Pt∕BiFeO3∕SrTiO3∕GaN capacitor exhibited hysteresis with a memory window of ∼3V at a sweeping voltage of ±30V.
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