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The authors report the integration of multiferroic BiFeO3 films with the semiconductor GaN using liquid-delivery metal-organic chemical-vapor deposition. Epitaxial BiFeO3 films were deposited via interface control using SrTiO3 buffer/template layers. The growth orientation relationship was found to be (111)[11¯0]BiFeO3‖(111)[11¯0]SrTiO3‖(0001)[112¯0]GaN, with in-plane 180° rotational twins. The C-V characteristics of a Pt∕BiFeO3∕SrTiO3∕GaN capacitor exhibited hysteresis with a memory window of ∼3V at a sweeping voltage of ±30V.

+Capacitance-voltage characteristics of BiFeO3∕SrTiO3∕GaN heteroepitaxial structures