Open AccessSiGe double barrier resonant tunneling diodes on bulk SiGe substrates with high peak-to-valley current ratio
Author(s) -
Soichiro Tsujino,
Noritaka Usami,
A. P. Weber,
Gregor Mußler,
V. V. Shushunova,
Detlev Grützmacher,
Yukinaga Azuma,
K. Nakajima
Publication year - 2007
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.2756363
Subject(s) - molecular beam epitaxy , quantum tunnelling , heterojunction , optoelectronics , materials science , diode , resonant tunneling diode , quantum well , silicon germanium , layer (electronics) , barrier layer , deposition (geology) , silicon , epitaxy , nanotechnology , physics , optics , paleontology , sediment , biology , laser
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