Wet oxidation of nitride layer implanted with low-energy Si ions for improved oxide-nitride-oxide memory stacks | Zendy

V. Ioannou-Sougleridis | Zendy; Panagiotis Dimitrakis | Zendy; V. Em. Vamvakas | Zendy; P. Normand | Zendy; Caroline Bonafos | Zendy; Sylvie SchammChardon | Zendy; N. Cherkashin | Zendy; Gérard Assayag | Zendy; Michele Perego | Zendy; M. Fanciulli | Zendy

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Wet oxidation of nitride layer implanted with low-energy Si ions for improved oxide-nitride-oxide memory stacks

Author(s) -

V. Ioannou-Sougleridis,

Panagiotis Dimitrakis,

V. Em. Vamvakas,

P. Normand,

Caroline Bonafos,

Sylvie SchammChardon,

N. Cherkashin,

Gérard Assayag,

Michele Perego,

M. Fanciulli

Publication year - 2007

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2752769

Subject(s) - nitride , oxide , materials science , silicon nitride , silicon oxide , locos , layer (electronics) , equivalent oxide thickness , silicon , stack (abstract data type) , dielectric , optoelectronics , inorganic chemistry , nanotechnology , gate oxide , chemistry , metallurgy , electrical engineering , engineering , transistor , voltage , computer science , programming language

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