Open AccessHuge positive magnetoresistance of GaAs∕AlGaAs high electron mobility transistor structures at high temperatures
Author(s) -
ChienChung Wang,
ChiTe Liang,
Yuting Jiang,
Y. F. Chen,
Nigel R. Cooper,
M. Y. Simmons,
D. A. Ritchie
Publication year - 2007
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.2750388
Subject(s) - high electron mobility transistor , magnetoresistance , transistor , materials science , optoelectronics , ferromagnetism , condensed matter physics , electron mobility , scalability , gallium arsenide , electron , electrical engineering , magnetic field , physics , computer science , engineering , voltage , database , quantum mechanics
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