Segregation and precipitation of Er in Ge | Zendy

S. O. Kucheyev | Zendy; J. E. Bradby | Zendy; S. Ruffell | Zendy; C. P. Li | Zendy; T. E. Felter | Zendy; A. V. Hamza | Zendy

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Segregation and precipitation of Er in Ge

Author(s) -

S. O. Kucheyev,

J. E. Bradby,

S. Ruffell,

C. P. Li,

T. E. Felter,

A. V. Hamza

Publication year - 2007

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2743881

Subject(s) - recrystallization (geology) , annealing (glass) , materials science , amorphous solid , germanium , ion , doping , redistribution (election) , precipitation , ion implantation , chemical physics , chemical engineering , crystallography , silicon , chemistry , metallurgy , optoelectronics , physics , meteorology , paleontology , organic chemistry , politics , political science , law , biology , engineering

Although Er-doped Ge nanomaterials are attractive for photonic applications, very little is known about the basic properties of Er in Ge. Here, the authors study the annealing behavior of Ge implanted with keV Er ions to doses resulting in ≲1at.% of Er. Large redistribution of Er, with segregation at the amorphous/crystalline interface, starts at ≳500°C, while lower temperatures are required for material recrystallization. However, even at 400°C, Er forms precipitates. The concentration of Er trapped in the bulk after recrystallization decreases with increasing temperature but is independent of the initial bulk Er concentration for the range of ion doses studied here.

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