Strain relaxation and critical temperature in epitaxial ferroelectric Pb(Zr0.20Ti0.80)O3 thin films | Zendy

Stefano Gariglio | Zendy; N. Stucki | Zendy; J.M. Triscone | Zendy; G. Triscone | Zendy

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Strain relaxation and critical temperature in epitaxial ferroelectric Pb(Zr0.20Ti0.80)O3 thin films

Author(s) -

Stefano Gariglio,

N. Stucki,

J.M. Triscone,

G. Triscone

Publication year - 2007

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2740171

Subject(s) - ferroelectricity , materials science , epitaxy , condensed matter physics , thin film , relaxation (psychology) , diffraction , strain (injury) , stress relaxation , doping , crystallography , composite material , optics , nanotechnology , optoelectronics , chemistry , dielectric , creep , medicine , psychology , social psychology , physics , layer (electronics)

Strain relaxation and the ferroelectric critical temperature were investigated in a series of epitaxial Pb(Zr0.20Ti0.80)O3 thin films of different thicknesses grown on metallic 0.5% Nb-doped SrTiO3 substrates. Detailed x-ray diffraction studies reveal that strain relaxation progressively occurs via misfit dislocations as the film thickness is increased from fully coherent films (for films below 150A) to essentially relaxed films (for thicknesses above typically 800A). It is found that this change in the strain state does not modify the ferroelectric critical temperature which is found for all the samples to be around 680°C, a value much higher than the bulk.

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