Erratum: “Polycrystalline silicon produced by Ni-silicide mediated crystallization of amorphous silicon in an electric field” [J. Appl. Phys. 88, 3099 (2000)]
Author(s) -
Jin Jang,
Seong Jin Park,
Kyun Ho Kim,
Bong Rae Cho,
Won Kyu Kwak,
Soo Young Yoon
Publication year - 2007
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.2737963
Subject(s) - silicon , silicide , crystallization , materials science , amorphous silicon , polycrystalline silicon , amorphous solid , electric field , condensed matter physics , crystallite , engineering physics , optoelectronics , crystallography , chemistry , metallurgy , nanotechnology , physics , crystalline silicon , quantum mechanics , organic chemistry , layer (electronics) , thin film transistor
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