Open AccessEpitaxially stabilized growth of orthorhombic LuScO3 thin films
Author(s) -
T. Heeg,
M. Roeckerath,
J. Schubert,
W. Zander,
Ch. Buchal,
H. Y. Chen,
ChunLin Jia,
Yonglei Jia,
Carolina Adamo,
Darrell G. Schlom
Publication year - 2007
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.2737136
Subject(s) - materials science , bixbyite , orthorhombic crystal system , epitaxy , thin film , perovskite (structure) , crystallinity , crystallography , molecular beam epitaxy , pulsed laser deposition , transmission electron microscopy , electron diffraction , rutherford backscattering spectrometry , crystal structure , analytical chemistry (journal) , diffraction , indium , optoelectronics , nanotechnology , optics , chemistry , composite material , physics , layer (electronics) , chromatography
Metastable lutetium scandate (LuScO3) thin films with an orthorhombic perovskite structure have been prepared by molecular-beam epitaxy and pulsed-laser deposition on NdGaO3(110) and DyScO3(110) substrates. Stoichiometry and crystallinity were investigated using Rutherford backscattering spectrometry/channeling, x-ray diffraction, and transmission electron microscopy. The results indicate that LuScO3, which normally only exists as a solid solution of Sc2O3 and Lu2O3 with the cubic bixbyite structure, can be grown in the orthorhombically distorted perovskite structure. Rocking curves as narrow as 0.05 degrees were achieved. A critical film thickness of approximately 200 nm for the epitaxially stabilized perovskite polymorph of LuScO3 on NdGaO3(110) substrates was determined. (C) 2007 American Institute of Physics
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