X-ray diffraction study on an InGaN∕GaN quantum-well structure of prestrained growth
Author(s) -
Wen-Yu Shiao,
ChiFeng Huang,
Tsung-Yi Tang,
JengJie Huang,
Yen-Cheng Lu,
ChengYen Chen,
YungSheng Chen,
C. C. Yang
Publication year - 2007
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.2736860
Subject(s) - indium , quantum well , materials science , diffraction , transmission electron microscopy , stress relaxation , relaxation (psychology) , reciprocal lattice , condensed matter physics , optoelectronics , analytical chemistry (journal) , optics , chemistry , metallurgy , physics , laser , nanotechnology , psychology , social psychology , chromatography , creep
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