Open AccessEffect of sulfur passivation of silicon (100) on Schottky barrier height: Surface states versus surface dipole
Author(s) -
Muhammad Ali,
Meng Tao
Publication year - 2007
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.2733611
Subject(s) - passivation , dangling bond , work function , schottky barrier , schottky diode , silicon , materials science , analytical chemistry (journal) , surface states , nickel , aluminium , metal , diode , chemistry , optoelectronics , metallurgy , nanotechnology , surface (topology) , layer (electronics) , geometry , mathematics , chromatography
Supported by the National Science Foundation under Grant Nos. 0322762 and 0620319 and the Texas Advanced Technology Program under Grant No. 003656-0096.
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