Multiple wavelength InGaAs quantum dot lasers using selective area epitaxy | Zendy

Sudha Mokkapati | Zendy; Hark Hoe Tan | Zendy; C. Jagadish | Zendy

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Multiple wavelength InGaAs quantum dot lasers using selective area epitaxy

Author(s) -

Sudha Mokkapati,

Hark Hoe Tan,

C. Jagadish

Publication year - 2007

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2731729

Subject(s) - optoelectronics , quantum dot , quantum dot laser , laser , materials science , substrate (aquarium) , gallium arsenide , quantum well , fabrication , epitaxy , wavelength , molecular beam epitaxy , band gap , indium gallium arsenide , stack (abstract data type) , semiconductor laser theory , layer (electronics) , optics , nanotechnology , semiconductor , physics , medicine , oceanography , alternative medicine , pathology , computer science , programming language , geology

The authors demonstrate multiple wavelength lasers fabricated from InGaAs quantum dots. Selective area epitaxy is used to grow the active region, consisting of five layer stack of InGaAs quantum dots with different band gap energies in selected regions of the substrate, for fabrication of the lasers. The mechanism responsible for engineering of the band gap of quantum dots is discussed. The performance of the selectively grown lasers is compared to the lasers fabricated from structures grown in a standard, nonselective area growth process.

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