Open AccessBand Alignment and Carrier Recombination in GaAsSb/GaAs Quantum Wells
Author(s) -
K. Hild,
Stephen J. Sweeney,
S. R. Jin,
S.B. Healy,
Eoin P. O’Reilly,
S. R. Johnson,
J.-B. Wang,
Y.-H. Zhang
Publication year - 2007
Publication title -
aip conference proceedings
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.177
H-Index - 75
eISSN - 1551-7616
pISSN - 0094-243X
DOI - 10.1063/1.2730443
Subject(s) - auger effect , recombination , optoelectronics , materials science , quantum well , carrier lifetime , spontaneous emission , leakage (economics) , gallium arsenide , laser , auger , atomic physics , physics , optics , silicon , chemistry , biochemistry , macroeconomics , economics , gene
Using a combination of experimental and theoretical techniques, we investigated the band alignment and the carrier recombination processes occurring in GaAsSb/GaAs structures. We find that for Sb fractions ∼30%, the band alignment is slightly type II. From studies on lasers based upon this material we show that at the high carrier densities required to achieve threshold, at room temperature, the devices are dominated by carrier leakage and non‐radiative Auger recombination.
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