Oblique Hanle Measurements of InAs/GaAs Quantum Dot Spin-Light Emitting Diodes | Zendy

Grigorios Itskos | Zendy; Edmund Harbord | Zendy; S. K. Clowes | Zendy; Edmund Clarke | Zendy; Pol Van Dorpe | Zendy; W. Van Roy | Zendy; L. F. Cohen | Zendy; R. Murray | Zendy

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Oblique Hanle Measurements of InAs/GaAs Quantum Dot Spin-Light Emitting Diodes

Author(s) -

Grigorios Itskos,

Edmund Harbord,

S. K. Clowes,

Edmund Clarke,

Pol Van Dorpe,

W. Van Roy,

L. F. Cohen,

R. Murray

Publication year - 2007

Publication title -

aip conference proceedings

Language(s) - English

Resource type - Conference proceedings

SCImago Journal Rank - 0.177

H-Index - 75

eISSN - 1551-7616

pISSN - 0094-243X

DOI - 10.1063/1.2730373

Subject(s) - quantum dot , oblique case , hanle effect , light emitting diode , spin (aerodynamics) , diode , optoelectronics , polarization (electrochemistry) , materials science , spin polarization , condensed matter physics , ground state , gallium arsenide , physics , optics , atomic physics , quantum mechanics , scattering , linguistics , philosophy , chemistry , thermodynamics , electron

We report here electrical spin injection through an Fe contact into a quantum dot light emitting diode structure using the oblique Hanle geometry. The measured spin polarization in the ground state of the dots is estimated to be 7.5% at 15 K while the injected spin polarization into the structure is estimated to be 20%.

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