Experimental determination of the band gap dependence of Auger recombination in InGaAs∕InP multiple quantum well lasers at room temperature | Zendy

N. F. Massé | Zendy; A.R. Adams | Zendy; Stephen J. Sweeney | Zendy

Open Access

Experimental determination of the band gap dependence of Auger recombination in InGaAs∕InP multiple quantum well lasers at room temperature

Author(s) -

N. F. Massé,

A.R. Adams,

Stephen J. Sweeney

Publication year - 2007

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2722041

Subject(s) - auger effect , radiative transfer , auger , band gap , atomic physics , quantum well , chemistry , current (fluid) , direct and indirect band gaps , spontaneous emission , laser , optoelectronics , condensed matter physics , materials science , optics , physics , thermodynamics

The band gap dependencies of the threshold current and its radiative component are measured using high pressure techniques. Detailed theoretical calculations show that the band gap dependence of the internal losses plays a significant role in the band gap dependence of the radiative current. Temperature dependence measurements show that the radiative current accounts for 20% of the total threshold current at room temperature. This allows us to determine the pressure dependence of the non-radiative Auger recombination current, and hence to experimentally obtain the variation of the Auger coefficient C with band gap. (c) 2007 American Institute of Physics.

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