Quantum fluctuation of tunneling current in individual Ge quantum dots induced by a single-electron transfer | Zendy

Yoshiaki Nakamura | Zendy; Masakazu Ichikawa | Zendy; Kentaro Watanabe | Zendy; Yasuhiro Hatsugai | Zendy

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Quantum fluctuation of tunneling current in individual Ge quantum dots induced by a single-electron transfer

Author(s) -

Yoshiaki Nakamura,

Masakazu Ichikawa,

Kentaro Watanabe,

Yasuhiro Hatsugai

Publication year - 2007

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2720756

Subject(s) - quantum tunnelling , quantum dot , electron , matter wave , condensed matter physics , quantum point contact , electron transfer , scanning tunneling spectroscopy , wave packet , physics , materials science , quantum , atomic physics , chemistry , quantum well , optoelectronics , quantum mechanics , laser , organic chemistry

A scanning tunneling microscopic study revealed quantum fluctuation of tunneling currents in individual Ge quantum dots (QDs) on SiO2/Si. This was due to the charging energy change in the QDs caused by single-electron transfer from or into the QDs. The observed electron discharging time of approximately milliseconds agreed with the propagation model of the electron wave packets from the QDs to the Si substrates by a tunneling effect rather than by passing through voids in the SiO2 smaller than electron de Broglie wavelength

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