Systematic study of contact annealing: Ambipolar silicon nanowire transistor with improved performance | Zendy

K. Byon | Zendy; Douglas Tham | Zendy; J. E. Fischer | Zendy; A. T. Charlie Johnson | Zendy

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Systematic study of contact annealing: Ambipolar silicon nanowire transistor with improved performance

Author(s) -

K. Byon,

Douglas Tham,

J. E. Fischer,

A. T. Charlie Johnson

Publication year - 2007

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2720309

Subject(s) - ambipolar diffusion , materials science , annealing (glass) , nanowire , silicon , transistor , optoelectronics , field effect transistor , nanotechnology , electron mobility , contact resistance , electrical engineering , composite material , voltage , physics , engineering , layer (electronics) , plasma , quantum mechanics

High performance ambipolar silicon nanowire (SiNW) transistors were fabricated. SiNWs with uniform oxide sheath thicknesses of 6–7nm were synthesized via a gas-flow-controlled thermal evaporation method. Field effect transistors (FETs) were fabricated using as-grown SiNWs. A two step annealing process was used to control contacts between SiNW and metal source and drain in order to enhance device performance. Initially p-channel devices exhibited ambipolar behavior after contact annealing at 400°C. Significant increases in on/off ratio and channel mobility were also achieved by annealing.

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