Single mode stimulated emission from prismlike gallium nitride submicron cavities | Zendy

C.M. Lai | Zendy; HsiaoMei Wu | Zendy; PoJung Huang | Zendy; S.-L. Wang | Zendy; L.-H. Peng | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Single mode stimulated emission from prismlike gallium nitride submicron cavities

Author(s) -

C.M. Lai,

HsiaoMei Wu,

PoJung Huang,

S.-L. Wang,

L.-H. Peng

Publication year - 2007

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2720259

Subject(s) - laser linewidth , gallium nitride , materials science , blueshift , polarization (electrochemistry) , gallium , optics , wide bandgap semiconductor , optoelectronics , nitride , photoluminescence , chemistry , laser , physics , layer (electronics) , nanotechnology , metallurgy

The authors report single mode stimulated emission from optical pumping of prismlike gallium nitride (GaN) with a side length of 0.75μm. The cavities were formed by reaction-rate-limited photoetching that preserved the nonpolar {101¯0} or {112¯0} facets. They were characterized by an average quality factor above 103 and an equivalent facet reflectivity exceeding 98%, which allowed field amplification by repeated internal reflections in the transverse plane and field polarization along the c axis. Slight spectral blueshift (0.35nm) and narrowing in linewidth (∼0.4nm) were observed with increase of pump intensity. These observations manifested resonant coupling of the band edge emission to a single mode of the prismlike GaN cavity.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research