Strain enhancement during annealing of GaAsN alloys | Zendy

Qiandong Zhuang | Zendy; A. Krier | Zendy; C.R. Stanley | Zendy

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Strain enhancement during annealing of GaAsN alloys

Author(s) -

Qiandong Zhuang,

A. Krier,

C.R. Stanley

Publication year - 2007

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.2717603

Subject(s) - annealing (glass) , photoluminescence , materials science , laser linewidth , blueshift , alloy , diffraction , homogeneity (statistics) , condensed matter physics , crystallography , analytical chemistry (journal) , optoelectronics , metallurgy , chemistry , optics , laser , statistics , physics , mathematics , chromatography

We have investigated the effect of rapid thermal annealing (RTA) on the optical and structural properties of GaAsN alloys using photoluminescence (PL) and double-crystal x-ray diffraction. We observe a significant anomalous strain enhancement during RTA and a blueshift of the PL peak energy accompanied by a reduction in the emission linewidth. The PL features are attributed to an improvement in the homogeneity of the alloy, and the strain enhancement reflects a change in N-related complexes during annealing. Based on a defect model, an interstitial nitrogen concentration of 1.8×1019 cm−3 is deduced prior to annealing

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