Regrowth-related defect formation and evolution in 1MeV amorphized (001) Ge | Zendy

D. P. Hickey | Zendy; Z. L. Bryan | Zendy; K. S. Jones | Zendy; R. G. Elliman | Zendy; E. E. Haller | Zendy

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Regrowth-related defect formation and evolution in 1MeV amorphized (001) Ge

Author(s) -

D. P. Hickey,

Z. L. Bryan,

K. S. Jones,

R. G. Elliman,

E. E. Haller

Publication year - 2007

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2717538

Subject(s) - amorphous solid , materials science , dissolution , layer (electronics) , crystallographic defect , planar , crystallography , composite material , condensed matter physics , chemistry , physics , computer graphics (images) , computer science

Ge implanted with 1MeV Si+ at a dose of 1×1015cm−2 creates a buried amorphous layer that, upon regrowth, exhibits several forms of defects–end-of-range (EOR), regrowth-related, and clamshell defects. Unlike Si, no planar {311} defects are observed. The minimal EOR defects are small dotlike defects and are very unstable, dissolving between 450 and 550°C. This is in contrast to Si, where the EOR defects are very stable. The amorphous layer results in both regrowth-related defects and clamshell defects, which were more stable than the EOR damage.

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