Highly stable three-band white light from an InGaN-based blue light-emitting diode chip precoated with (oxy)nitride green/red phosphors
Author(s) -
Chih-Chieh Yang,
Chih-Min Lin,
Yi-Jung Chen,
Yi-Tsuo Wu,
Shih-Ren Chuang,
RuShi Liu,
ShuFen Hu
Publication year - 2007
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.2714326
Subject(s) - phosphor , light emitting diode , optoelectronics , materials science , green light , white light , luminous efficacy , diode , wide bandgap semiconductor , blue light , red light , nitride , excited state , gallium nitride , optics , physics , nanotechnology , layer (electronics) , botany , nuclear physics , biology
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom