z-logo
open-access-imgOpen Access
Highly stable three-band white light from an InGaN-based blue light-emitting diode chip precoated with (oxy)nitride green/red phosphors
Author(s) -
Chih-Chieh Yang,
Chih-Min Lin,
Yi-Jung Chen,
Yi-Tsuo Wu,
Shih-Ren Chuang,
RuShi Liu,
ShuFen Hu
Publication year - 2007
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.2714326
Subject(s) - phosphor , light emitting diode , optoelectronics , materials science , green light , white light , luminous efficacy , diode , wide bandgap semiconductor , blue light , red light , nitride , excited state , gallium nitride , optics , physics , nanotechnology , layer (electronics) , botany , nuclear physics , biology

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom