Open AccessInfluence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure
Author(s) -
Yang Liu,
T. P. Chen,
Lu Ding,
Mengqiao Yang,
J. I. Wong,
C. Y. Ng,
S. F. Yu,
Z. X. Li,
Clement Yuen,
Furong Zhu,
Mingyan Tan,
S. Fung
Publication year - 2007
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.2713946
Subject(s) - electroluminescence , materials science , trapping , optoelectronics , annealing (glass) , nanocrystal , silicon , indium tin oxide , substrate (aquarium) , oxide , thermal oxidation , light emitting diode , thermal stability , thin film , nanotechnology , chemistry , layer (electronics) , metallurgy , ecology , oceanography , geology , biology , organic chemistry
We report a study on the influence of charge trapping on electroluminescence (EL) from Si nanocrystal (nc-Si) distributed throughout a 30 nm Si O2 thin film synthesized by Si+ implantation into an oxide film thermally grown on a p -type Si substrate. The electron and hole trapping in the nc-Si located near the indium tin oxide gate and the Si substrate, respectively, cause a reduction in the EL intensity. The reduced EL intensity can be recovered after the trapped charges are released. A partial recovery can be easily achieved by the application of a positive gate voltage or thermal annealing at hot temperatures (e.g., 120 °C) for a short duration. The present study highlights the impact of charging in the nc-Si on the light emission efficiency and its stability of nc-Si light-emitting devices. © 2007 American Institute of Physics.published_or_final_versio
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