Raman and x-ray diffraction studies of Ba doped germanium clathrate Ba8Ge43 at high pressures
Author(s) -
Hiroyasu Shimizu,
Toshiaki Iitaka,
T. Fukushima,
Tetsuji Kume,
Shigeo Sasaki,
Nagayoshi Sata,
Yasuo Ohishi,
Hiroshi Fukuoka,
Shōji Yamanaka
Publication year - 2007
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.2713354
Subject(s) - isostructural , raman spectroscopy , clathrate hydrate , diamond anvil cell , phase transition , materials science , diffraction , crystallography , germanium , doping , x ray crystallography , silicon , crystal structure , chemistry , condensed matter physics , hydrate , optics , physics , optoelectronics , organic chemistry , metallurgy
High-pressure Raman and x-ray diffraxtion (XRD) measurements of a defect clathrate Ba8Ge43◻3 have been carried out at room temperature up to 40 GPa. Three vibrational modes associated with guest Ba atoms were observed in the low-frequency region, and the structureless spectrum due to Ge vacancies was found in the framework vibrational region. The Raman spectra shows a pressure-induced phase transition at 8 GPa, which is due to the structural distortion through the three-bonded Ge atoms and to the change in the guest-host electronic interaction. Both Raman spectra and XRD patterns present the evidence for the amorphization of Ba8Ge43 around 30–40 GPa. The isostructural phase transition often present in intercalated silicon clathrates and associated with a large volume reduction was not observed for Ba8Ge43 up to 40 GPa. The pressure dependence of the lattice constant (a) normalized by a0 at 1 bar (a∕a0) shows the continuous decrease with pressure until amorphization. From the good coincidence of this curve...
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