Comment on “Photoluminescence study of Sb-doped p-type ZnO films by molecular-beam epitaxy” [Appl. Phys. Lett. 87, 252102 (2005)]
Author(s) -
Y. J. Zeng,
Z. Z. Ye
Publication year - 2007
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.2713173
Subject(s) - molecular beam epitaxy , photoluminescence , doping , materials science , epitaxy , wide bandgap semiconductor , optoelectronics , condensed matter physics , nanotechnology , physics , layer (electronics)
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