Effect of substrate misorientation on the InAs∕InAlAs∕InP nanostructure morphology and lateral composition modulation in the InAlAs matrix | Zendy

Lei Wang | Zendy; Yongliang Wang | Zendy; Y. H. Chen | Zendy; Peng Jin | Zendy; X. L. Ye | Zendy; Bo Xu | Zendy; Z. G. Wang | Zendy

Open Access

Effect of substrate misorientation on the InAs∕InAlAs∕InP nanostructure morphology and lateral composition modulation in the InAlAs matrix

Author(s) -

Lei Wang,

Yongliang Wang,

Y. H. Chen,

Peng Jin,

X. L. Ye,

Bo Xu,

Z. G. Wang

Publication year - 2007

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2711778

Subject(s) - photoluminescence , materials science , misorientation , nucleation , optoelectronics , quantum dot , substrate (aquarium) , nanostructure , heterojunction , homogeneity (statistics) , transmission electron microscopy , quantum well , nanotechnology , laser , optics , chemistry , microstructure , composite material , grain boundary , mathematics , physics , geology , oceanography , organic chemistry , statistics

The authors report the self-organized growth of InAsInAlAs quantum wires on nominal (001) InP substrate and (001) InP substrates misoriented by 2°, 4°, and 8° towards both [-110] and [110]. The influence of substrate misorientation on the structural and optical properties of these InAsInAlAs quantum wires is studied by transmission electron microscopy and photoluminescence measurements. Compared with that grown on nominal (001) InP substrate, the density of InAsInAlAs quantum wires grown on misoriented InP(001) substrates is enhanced. A strong lateral composition modulation effect take place in the InAlAs buffer layers grown on misoriented InP substrates with large off-cut angles (4° and 8°), which induces a nucleation template for the first-period InAs quantum wires and greatly improve the size distribution of InAs quantum wires. InAsInAlAs quantum wires grown on InP (001) substrate 8° off cut towards [-110] show the best size homogeneity and photoluminescence intensity. © 2007 American Institute of Physics.

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