Technical Developments and Principal Results of Vertical Feeding Method for GaSb and GaInSb Alloys | Zendy

J. Vincent | Zendy; C. Dı́az-Guerra | Zendy; J. Piqueras | Zendy; E. Diéguez | Zendy

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Technical Developments and Principal Results of Vertical Feeding Method for GaSb and GaInSb Alloys

Author(s) -

J. Vincent,

C. Dı́az-Guerra,

J. Piqueras,

E. Diéguez

Publication year - 2007

Publication title -

aip conference proceedings

Language(s) - English

Resource type - Conference proceedings

SCImago Journal Rank - 0.177

H-Index - 75

eISSN - 1551-7616

pISSN - 0094-243X

DOI - 10.1063/1.2711724

Subject(s) - indium , materials science , enhanced data rates for gsm evolution , work (physics) , principal (computer security) , process (computing) , optoelectronics , reduction (mathematics) , phase (matter) , set (abstract data type) , doping , computer science , engineering physics , physics , geometry , telecommunications , mathematics , thermodynamics , quantum mechanics , operating system , programming language

In this work, the experimental set-up of the Vertical Feeding Method (VFM) which has been used for the preparation of GaSb and GaInSb materials is presented. The different elements of the set-up are detailed as well as the preparation process. The different configurations that have been used for material production are briefly described and the principal results are summarized. In the case of Te-doped GaSb materials, the study, focused on the grain size and structure of the as-grown materials, showed that single crystals can be obtained with the VFM. In the case of GaInSb materials, the study, focused on the spatial indium distribution in the solid phase prepared with the different VFM configurations, showed that an effective band edge reduction can be achieved

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