Alloying induced degradation of the absorption edge of InAsxSb1−x | Zendy

Bhavtosh Bansal | Zendy; V. K. Dixit | Zendy; V. Venkataraman | Zendy; H. L. Bhat | Zendy

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Alloying induced degradation of the absorption edge of InAsxSb1−x

Author(s) -

Bhavtosh Bansal,

V. K. Dixit,

V. Venkataraman,

H. L. Bhat

Publication year - 2007

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2711388

Subject(s) - alloy , band gap , bowing , materials science , absorption edge , wide bandgap semiconductor , degradation (telecommunications) , absorption (acoustics) , enhanced data rates for gsm evolution , analytical chemistry (journal) , condensed matter physics , metallurgy , optoelectronics , composite material , chemistry , physics , telecommunications , philosophy , theology , computer science , chromatography

InAs_{x}Sb_{1-x} alloys show a strong bowing in the energy gap, the energygap of the alloy can be less than the gap of the two parent compounds. Wedemonstrate that a consequence of this alloying is a systematic degradation inthe sharpness of the absorption edge. The alloy disorder induced band-tail(Urbach tail) characteristics are quantitatively studied forInAs_{0.05}Sb_{0.95}.

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