Long wavelength bulk GaInNAs p−i−n photodiodes lattice matched to GaAs | Zendy

Jo Shien Ng | Zendy; W. M. Soong | Zendy; M. J. Steer | Zendy; M. Hopkinson | Zendy; J.P.R. David | Zendy; J. Chamings | Zendy; Stephen J. Sweeney | Zendy; A.R. Adams | Zendy

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Long wavelength bulk GaInNAs p−i−n photodiodes lattice matched to GaAs

Author(s) -

Jo Shien Ng,

W. M. Soong,

M. J. Steer,

M. Hopkinson,

J.P.R. David,

J. Chamings,

Stephen J. Sweeney,

A.R. Adams

Publication year - 2007

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.2709622

Subject(s) - responsivity , photodiode , molecular beam epitaxy , materials science , optoelectronics , doping , gallium arsenide , wavelength , lattice constant , lattice (music) , optics , epitaxy , layer (electronics) , photodetector , physics , diffraction , nanotechnology , acoustics

We report bulk GaInNAs p-i-n photodiodes lattice-matched to GaAs substrates, grown by solid source molecular beam epitaxy with photoresponses out to similar to 1.3 mu m. The as-grown samples were characterized optically, structurally, and electrically. A low background doping concentration in the range of 10(14)-10(15) cm(-3) was obtained in the samples. One of the samples with a 0.5 mu m thick GaInNAs absorbing layer gave a responsivity of 0.11 A/W for a band edge of 1.28 mu m at reverse bias of 2 V.

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