Dopant dependence on passivation and reactivation of carrier after hydrogenation | Zendy

Naoki Fukata | Zendy; Shōichi Satō | Zendy; H. Morihiro | Zendy; K. Murakami | Zendy; Kunie Ishioka | Zendy; Masahiro Kitajima | Zendy; Shunichi Hishita | Zendy

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Dopant dependence on passivation and reactivation of carrier after hydrogenation

Author(s) -

Naoki Fukata,

Shōichi Satō,

H. Morihiro,

K. Murakami,

Kunie Ishioka,

Masahiro Kitajima,

Shunichi Hishita

Publication year - 2007

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.2654831

Subject(s) - dopant , passivation , boron , annealing (glass) , trapping , hydrogen , doping , silicon , materials science , dopant activation , crystallography , chemistry , inorganic chemistry , nanotechnology , metallurgy , optoelectronics , organic chemistry , ecology , layer (electronics) , biology

The formation of hydrogen (H)-related complexes and H effects on boron (B) and phosphorus (P) dopants was investigated in B- or P-doped silicon (Si) crystal treated with high concentration of H. The reactivation process of dopant carriers by annealing after hydrogenation was significantly different between the p-type and n-type specimens. The difference is likely to be attributable to the formation of H-related defects based on the stable sites of the H atoms, i.e., complicated H multiple trapping centers are formed by bond breaking due to H atoms in only p-type B-doped Si

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