Open AccessEnhancement in the efficiency of light emission from silicon by a thin Al2O3 surface-passivating layer grown by atomic layer deposition at low temperature
Author(s) -
M. J. Chen,
Yu-Ting Shih,
M. K. Wu,
FengYu Tsai
Publication year - 2007
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.2464190
Subject(s) - atomic layer deposition , photoluminescence , materials science , silicon , exciton , optoelectronics , layer (electronics) , quantum efficiency , passivation , light emission , thin film , diode , nanotechnology , condensed matter physics , physics
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