Demonstration of an amorphous carbon tunnel diode | Zendy

Somnath Bhattacharyya | Zendy; S. Ravi P. Silva | Zendy

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Demonstration of an amorphous carbon tunnel diode

Author(s) -

Somnath Bhattacharyya,

S. Ravi P. Silva

Publication year - 2007

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2454512

Subject(s) - materials science , quantum tunnelling , diode , doping , optoelectronics , tunnel diode , amorphous carbon , insulator (electricity) , semiconductor , carbon fibers , tunnel junction , amorphous solid , chemistry , composite material , crystallography , composite number

Negative differential conductance in metal/amorphous nitrogenated carbon (a-CNx)∕Si structures is demonstrated at room temperature. These metal-insulator-semiconductor tunnel diodes are fabricated by optimizing the tunnel barrier at the a-CNx∕Si junction through the control of the band gap and nitrogen doping level in carbon where this a-C layer acts as a semi-insulator. A small electron tunneling effective mass of about 0.06 times the free electron mass, a coherence length of ∼10nm in these thin a-CNx layers and a low interface trap density suggest fast device operation similar to classical tunnel diodes.

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