Open AccessCrystallization of amorphous silicon by self-propagation of nanoengineered thermites
Author(s) -
Maruf Hossain,
S. Subramanian,
Shantanu Bhattacharya,
Yuanfang Gao,
Steve Apperson,
Rajesh V. Shende,
S. Guha,
Mohammad Ali Arif,
Mengjun Bai,
Keshab Gangopadhyay,
Shubhra Gangopadhyay
Publication year - 2007
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.2450672
Subject(s) - thermite , materials science , crystallization , amorphous solid , silicon , substrate (aquarium) , chemical engineering , amorphous silicon , raman spectroscopy , nanocomposite , thin film , chemical vapor deposition , composite material , aluminium , metallurgy , nanotechnology , crystalline silicon , chemistry , crystallography , optics , oceanography , physics , engineering , geology
doi:10.1063/1.2450672Crystallization of amorphous silicon (a-Si) thin film occurred by the self-propagation of copper oxide/aluminum thermite nanocomposites. Amorphous Si films were prepared on glass at a temperature of 250 °C by plasma enhanced chemical vapor deposition. The platinum heater was patterned on the edge of the substrate and the CuO/Al nanoengineered thermite was spin coated on the substrate that connects the heater and the a-Si film. A voltage source was used to ignite the thermites followed by a piranha solution (4:1 of H2SO4:H2O2) etch for the removal of residual products of thermite reaction. Raman spectroscopy was used to confirm the crystallization of a-Si.The authors acknowledge Dr. Hameed A. Naseem, Professor of the University of Arkansas, for providing the a-Si samples. The authors also acknowledge the NSF NIRT
(Grant No. 1316-1898-01) for funding this project
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