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doi:10.1063/1.2450672Crystallization of amorphous silicon (a-Si)  thin film occurred by the self-propagation of copper oxide/aluminum thermite nanocomposites. Amorphous Si films were prepared on glass at a temperature of 250 °C by plasma enhanced chemical vapor deposition. The platinum heater was patterned on the edge of the substrate and the CuO/Al nanoengineered thermite was spin coated on the substrate that connects the heater and the a-Si film. A voltage source was used to ignite the thermites followed by a piranha solution (4:1 of H2SO4:H2O2) etch for the removal of residual products of thermite reaction. Raman spectroscopy was used to confirm the crystallization of a-Si.The authors acknowledge Dr. Hameed A. Naseem, Professor of the University of Arkansas, for providing the a-Si samples. The authors also acknowledge the NSF NIRT(Grant No. 1316-1898-01) for funding this project

Crystallization of amorphous silicon by self-propagation of nanoengineered thermites