Cyclotron localization in a sub-10-nm silicon quantum dot single electron transistor | Zendy

MingChung Lin | Zendy; K. A. Aravind | Zendy; Cen-Shawn Wu | Zendy; Yuting Wu | Zendy; Chieh-Hsiung Kuan | Zendy; Watson Kuo | Zendy; C. D. Chen | Zendy

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Cyclotron localization in a sub-10-nm silicon quantum dot single electron transistor

Author(s) -

MingChung Lin,

K. A. Aravind,

Cen-Shawn Wu,

Yuting Wu,

Chieh-Hsiung Kuan,

Watson Kuo,

C. D. Chen

Publication year - 2007

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2431565

Subject(s) - quantum dot , condensed matter physics , landau quantization , coulomb blockade , oscillation (cell signaling) , cyclotron , physics , magnetic field , electron , context (archaeology) , silicon , transistor , chemistry , optoelectronics , voltage , quantum mechanics , paleontology , biochemistry , biology

The authors have fabricated and measured a lateral Si single electron transistor consisting of a succession of a big island and small quantum dots. The big island gives rise to a small period Coulomb oscillation riding on the large irregular oscillation arising from the small quantum dots. The peaks of the latter shift in the presence of a magnetic field, which is analyzed in the context of field-induced Landau level shift with a soft-wall confinement potential. Furthermore, the current peak was suppressed for fields beyond a threshold value. An explanation based on cyclotron localization at noninteracting Landau levels is presented. (c) 2007 American Institute of Physics

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