Sputtered gold as an effective Schottky gate for strained Si∕SiGe nanostructures | Zendy

Gavin D. Scott | Zendy; Ming Xiao | Zendy; Hong-Wen Jiang | Zendy; E. T. Croke | Zendy; Eli Yablonovitch | Zendy

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Sputtered gold as an effective Schottky gate for strained Si∕SiGe nanostructures

Author(s) -

Gavin D. Scott,

Ming Xiao,

Hong-Wen Jiang,

E. T. Croke,

Eli Yablonovitch

Publication year - 2007

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2430935

Subject(s) - heterojunction , materials science , optoelectronics , sputtering , schottky diode , fabrication , wetting layer , schottky barrier , silicon , layer (electronics) , nanostructure , nanotechnology , thin film , medicine , alternative medicine , pathology , diode

Metallization of Schottky surface gates by sputtering Au on strained Si/SiGeheterojunctions enables the depletion of the two dimensional electron gas(2DEG) at a relatively small voltage while maintaining an extremely low levelof leakage current. A fabrication process has been developed to enable theformation of sub-micron Au electrodes sputtered onto Si/SiGe without the needof a wetting layer.Comment: 3 pages, 3 figure

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