Dependence of carrier localization in InGaN∕GaN multiple-quantum wells on well thickness
Author(s) -
Jong H. Na,
Robert A. Taylor,
Kwan H. Lee,
Tao Wang,
Abbes Tahraoui,
P. J. Parbrook,
A. M. Fox,
Sam Nyung Yi,
Young S. Park,
Jae Wu Choi,
Jung S. Lee
Publication year - 2006
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.2423232
Subject(s) - photoluminescence , quantum well , materials science , optoelectronics , wide bandgap semiconductor , condensed matter physics , quantum dot , spectroscopy , physics , optics , laser , quantum mechanics
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