In As ∕ In P single quantum wire formation and emission at 1.5μm | Zendy

Benito Alén | Zendy; D. Fuster | Zendy; Y. González | Zendy; L. González | Zendy; Juan P. MartínezPastor | Zendy

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In As ∕ In P single quantum wire formation and emission at 1.5μm

Author(s) -

Benito Alén,

D. Fuster,

Y. González,

L. González,

Juan P. MartínezPastor

Publication year - 2006

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2403928

Subject(s) - photoluminescence , monolayer , quantum wire , materials science , quantum dot , quantum , nanostructure , atomic force microscopy , condensed matter physics , layer (electronics) , optoelectronics , resolution (logic) , quantum point contact , quantum well , nanotechnology , optics , physics , quantum mechanics , artificial intelligence , computer science , laser

Isolated InAs/InP self-assembled quantum wires have been grown using in situaccumulated stress measurements to adjust the optimal InAs thickness. Atomicforce microscopy imaging shows highly asymmetric nanostructures with averagelength exceeding more than ten times their width. High resolution opticalinvestigation of as-grown samples reveals strong photoluminescence fromindividual quantum wires at 1.5 microns. Additional sharp features are relatedto monolayer fluctuations of the two dimensional InAs layer present during theearly stages of the quantum wire self-assembling process.Comment: 4 pages and 3 figures submitted to Applied Physics Letter

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