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Isolated InAs/InP self-assembled quantum wires have been grown using in situaccumulated stress measurements to adjust the optimal InAs thickness. Atomicforce microscopy imaging shows highly asymmetric nanostructures with averagelength exceeding more than ten times their width. High resolution opticalinvestigation of as-grown samples reveals strong photoluminescence fromindividual quantum wires at 1.5 microns. Additional sharp features are relatedto monolayer fluctuations of the two dimensional InAs layer present during theearly stages of the quantum wire self-assembling process.Comment: 4 pages and 3 figures submitted to Applied Physics Letter

In As ∕ In P single quantum wire formation and emission at 1.5μm