Roles of oxygen and water vapor in the oxidation of halogen terminated Ge(111) surfaces | Zendy

Shiyu Sun | Zendy; Yun Sun | Zendy; Zhi Liu | Zendy; Dong-Ick Lee | Zendy; P. Pianetta | Zendy

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Roles of oxygen and water vapor in the oxidation of halogen terminated Ge(111) surfaces

Author(s) -

Shiyu Sun,

Yun Sun,

Zhi Liu,

Dong-Ick Lee,

P. Pianetta

Publication year - 2006

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2403908

Subject(s) - halogen , x ray photoelectron spectroscopy , water vapor , oxygen , layer (electronics) , chemistry , oxygen atom , inorganic chemistry , germanium , photochemistry , materials science , chemical engineering , molecule , organic chemistry , silicon , alkyl , engineering

The initial stage of the oxidation of Cl and Br terminated Ge(111) surfaces is studied using photoelectron spectroscopy. The authors perform controlled experiments to differentiate the effects of different factors in oxidation, and find that water vapor and oxygen play different roles. Water vapor effectively replaces the halogen termination layers with the hydroxyl group, but does not oxidize the surfaces further. In contrast, little oxidation is observed for Cl and Br terminated surfaces with dry oxygen alone. However, with the help of water vapor, oxygen oxidizes the surface by breaking the Ge–Ge back bonds instead of changing the termination layer.

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