Ultrafast carrier thermalization in InN | Zendy

YuChieh Wen | Zendy; Cheng–Ying Chen | Zendy; Chang-Hong Shen | Zendy; Shangjr Gwo | Zendy; ChiKuang Sun | Zendy

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Ultrafast carrier thermalization in InN

Author(s) -

YuChieh Wen,

Cheng–Ying Chen,

Chang-Hong Shen,

Shangjr Gwo,

ChiKuang Sun

Publication year - 2006

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2402899

Subject(s) - thermalisation , femtosecond , plasma , atomic physics , doping , phonon , materials science , excitation , ultrashort pulse , electron , carrier lifetime , electron mobility , semiconductor , condensed matter physics , molecular physics , chemistry , optoelectronics , physics , silicon , optics , laser , quantum mechanics

[[abstract]]Carrier thermalization dynamics in heavily doped n-type InN was investigated at room temperature with a femtosecond transient transmission measurement. The dependence of hot carrier cooling time on the total electron density indicates that the plasma screening of electron-LO phonon interactions is responsible for the reduction in energy-loss rate. Under low excitation, the carriers with different excess energies can be found to cool down with a fixed thermalization time of 1.4 ps. Intensity dependent study suggests that this relatively slow carrier cooling time could be attributed to the screening effect by high-background-doping plasma rather than the hot phonon effect.[[fileno]]2010109010080[[department]]物理

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