Structural characteristics of GaSb∕GaAs nanowire heterostructures grown by metal-organic chemical vapor deposition | Zendy

Yanan Guo | Zendy; Jin Zou | Zendy; Mohanchand Paladugu | Zendy; H. Wang | Zendy; Q. Gao | Zendy; Hark Hoe Tan | Zendy; C. Jagadish | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Structural characteristics of GaSb∕GaAs nanowire heterostructures grown by metal-organic chemical vapor deposition

Author(s) -

Yanan Guo,

Jin Zou,

Mohanchand Paladugu,

H. Wang,

Q. Gao,

Hark Hoe Tan,

C. Jagadish

Publication year - 2006

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2402234

Subject(s) - nanowire , heterojunction , chemical vapor deposition , materials science , metalorganic vapour phase epitaxy , metal , nanotechnology , optoelectronics , epitaxy , layer (electronics) , metallurgy

Highly lattice mismatched (7.8%) GaAs/GaSb nanowire heterostructures were grown by metal-organic chemical vapor deposition and their detailed structural characteristics were determined by electron microscopy. The facts that (i) no defects have been found in GaSb and its interfaces with GaAs and (ii) the lattice mismatch between GaSb/GaAs was fully relaxed suggest that the growth of GaSb nanowires is purely governed by the thermodynamics. The authors believe that the low growth rate of GaSb nanowires leads to the equilibrium growth. (c) 2006 American Institute of Physics.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research